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The temperature, humidity, and velocity of the blown and sucked air are easy to measure and register at the input and output of the air channels. However, these data give an overall view inside the room. This distribution must be periodically examined at various places in the room. The water loss can be measured simply by the (eventually continuous) weighing of some of the product units in the room. This can be solved by weighing devices mounted on the drying frames.

window) This can be achieved using the natural masks of the SA transistor, or by the addition of a silicide block mask over the extrinsic base region [72,73] For a SA SiGe HBT device, it was found that the base resistance was modulated by removal of the salicide lm leading to an increase in the positive stress base emitter HBM ESD results With removal of the salicide lm, current must ow through the polysilicon SiGe lm instead of the salicide lm itself In a SA SiGe HBT, the increase in the size of the emitter polysilicon increases the base series resistance The link resistance remains constant while the other two extrinsic terms are modi ed depending on whether the salicide extends to the single-crystal Si region or over the isolation (eg, the facet transition region).

3.1. Cell Isolation and Culture Bovine aortic SMCs and ECs are isolated with a technique previously described [D Amore and Smith, 1993]. Protocol 12.1. Isolation and Culture of Endothelial Cells for Vascular Tissue Engineering

As the silicide is pushed out beyond the facet, the base resistance will increase signi cantly exposing the amorphous SiGe lm RF measurements were also taken to evaluate the implications of the salicide-to-emitter spacing From the unity current gain cutoff frequency collector current plot (fT versus IC plot), unity power gain cutoff frequency collector current plot (fMAX versus IC) plot RF measurements, and the peak fMAX versus IC characteristics show that the peak fMAX decreases with increasing spacing of the salicide from the silicon emitter This effect can be demonstrated by increasing the polysilicon emitter width or by using a salicide block mask Using a salicide block mask level, RF measurements show an insigni cant change in the peak fT when the salicide is removed from within 04 mm of the emitter polysilicon edge.

Voice frequency (VF) repeaters (ampli ers) in telephone terminology imply the use of unidirectional ampli ers on VF trunks.10 With one approach on a two-wire trunk, two ampli ers are used on each pair connected by a hybrid at the input and a hybrid at the output. A simpli ed block diagram is shown in Figure 5.6. The gain of a VF repeater can be run up as high as 20 dB or 25 dB, and originally they were used at 50-mi intervals on 19-gauge loaded cable in the long-distance (toll) plant. Today they are seldom found on long-distance circuits, but they do have application on local trunk circuits where the gain requirements are considerably less. Trunks using VF repeaters have the repeater s gain adjusted to the equivalent loss of the circuit minus the 4-dB loss to provide the necessary singing margin. In practice, a repeater is installed at each end of the trunk circuit to simplify maintenance and power feeding. Gains may be as high as 6 8 dB. Another repeater commonly used on two-wire trunks is the negative-impedance repeater. This repeater can provide a gain as high as 12 dB, but 7 or 8 dB is more common in practice. The negative-impedance repeater requires an LBO at each port and is a true, two-way, two-wire repeater. The repeater action is based on regenerative feedback of two ampli ers. The advantage of negative-impedance repeaters is that they are transparent to dc signaling. On the other hand, VF repeaters require a composite arrangement to pass dc signaling. This consists of a transformer by-pass (Ref. 7).

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