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Voldman S, Gebreselasie E Low-voltage diode-con gured SiGe:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT /fMAX) SiGe:C HBT device Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2004 p 57 66 14 Voldman S Electrostatic discharge input and power clamp circuit for high cutoff frequency technology radio frequency (RF) applications US Patent No 6,946,707 (September 20, 2005) 15 Voldman S A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) silicon germanium technologies: Part I ESD Journal of Microelectronics and Reliability 2005;45:323 40 16 Voldman S A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) silicon germanium technologies: Part II Latchup Journal of Microelectronics and Reliability 2005;45:437 55 17 Ma Y, Li GP A novel on-chip ESD protection circuit for GaAs HBT RF power ampli ers.

Moreover, an 80211e backoff entity is allowed to exchange data frames directly with another backoff entity in a QBSS without involving communication with the QAP Whereas within an 80211-based infrastructure BSS all data frames are either sent or received by the AP, an 80211e QSTA can establish a direct link with another 80211e QSTA using the direct-link protocol (DLP) prior to initiating direct frame transmissions It should be noted that here the backoff entity deals with the local backoff entity of a tagged QSTA; therefore, they are used interchangeably [3 5] 12331 IEEE 80211e: EDCA In EDCA, QSTAs have up to four distinct and parallel queues for incoming traf c Each queue is coupled with a speci c access category (AC) and contends for the radio channel independent of the others.

As the Bluetooth frequency is known, the offset between the WLAN and the interferer can be calculated As shown in the experiments in [13], without using DFNS, the BER is 5% for a 5-MHz offset at approximately 11 dB CIR With DFNS, even for the worst case of a 1-MHz offset, a CIR of 20 dB can achieve a BER less than 01% Unlike META and AWMA, DFNS causes no delay for the transmission Because the frequencies of Bluetooth may not always fall into the WLAN band, in META and AWMA, the bandwidth is not fully utilized as in DFNS By using DFNS, the total data throughput for WLAN increases because there is no packet loss or retransmission due to collision..

Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2002 p 83 91; Journal of Electrostatics 2003;59:211 27 18 Ma Y, Li GP InGaP/GaAs HBT DC-20 GHz distributed ampli er with compact ESD protection circuits Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2004 p 50 4 19 Pequignot JP, Sloan JH, Stout DW, Voldman S Electrostatic discharge protection networks for triple well semiconductor devices US Patent No 6,891,207 (May 10, 2005) 20 Chen SS, Chen TY, Tang TH, Su JL, Shen TM, Chen JK Low leakage diode string designs using triple well technologies for RF ESD applications IEEE Electron Device Letters 2003;ED-24: 595 7 21 Chen JK, Chen TY, Tang TH, Su JL, Shen TM, Chen JK Designs of low-leakage deep trench diode string for ESD applications Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC) 2003;151 6 22.

Collisions among a tagged station s queues are resolved internally, allowing the higher priority queue to commence its transmission while forcing the lower priority queue(s) to perform a collision response4 Different levels of service are provided to each AC through a combination of three service differentiation mechanisms: arbitrary interframe space (AIFS), CW size, and TXOPlimit [3] In contrast to the DCF access rules by which the backoff procedure is started after the DIFS from the end of the last indicated busy medium, EDCA backoff entities start at different intervals according to the corresponding AC of the traf c queue As already pointed out, these time intervals are called AIFSs The time duration of the interframe spaceAIFS[AC] is given by AIFS AC SIFS AIFSN AC aSlotTime where AIFSN[AC] Z 2 Note that AIFSN[AC] should be chosen by the HC such that the earliest access time of 802.

Chen SS, Chen TY, Tang TH, Su JL, Chen JK, Chou CH Characteristics of low leakage deep trench diode for ESD protection design in 018-mm SiGe BiCMOS process IEEE Transactions on Electron Devices 2003;ED-50(7):1683 9 23 Wu WL, Ker MD Design on diode string to minimize leakage current for ESD protection in 018-um BiCMOS SiGe process Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC), 2004 p 72 6..